Semiconductor device

ABSTRACT

A semiconductor device includes a fin-shaped semiconductor layer on a semiconductor substrate and extends in a first direction with a first insulating film around the fin-shaped semiconductor layer. A pillar-shaped semiconductor layer resides on the fin-shaped semiconductor layer. A width of the bottom of the pillar-shaped semiconductor layer, perpendicular to the first direction is equal to a width of the top of the fin-shaped semiconductor layer perpendicular to the first direction. A gate insulating film is around the pillar-shaped semiconductor layer and a metal gate electrode is around the gate insulating film. A metal gate line extends in a second direction perpendicular to the first direction of the fin-shaped semiconductor layer and is connected to the metal gate electrode.

RELATED APPLICATIONS

This application is continuation application of U.S. patent applicationSer. No. 14/699,305, filed Apr. 29, 2015, which is continuationapplication of U.S. patent application Ser. No. 14/479,799, filed Sep.8, 2014, now U.S. Pat. No. 9,054,085, which is a continuation of U.S.patent application Ser. No. 14/100,496, filed Dec. 9, 2013, now U.S.Pat. No. 8,877,578, which is a continuation-in-part application of U.S.patent application Ser. No. 13/891,655, filed May 10, 2013, now U.S.Pat. No. 8,697,511, which claims the benefit of the filing date of U.S.Provisional Patent Appl. Ser. No. 61/648,817, filed May 18, 2012. Theentire contents of which are hereby incorporated by reference.

BACKGROUND

1. Field of the Invention

The present invention relates to a semiconductor device having afin-shaped semiconductor layer.

2. Description of the Related Art

Semiconductor integrated circuits, in particular, integrated circuitsthat use MOS transistors, are becoming more and more highly integrated.As the circuits achieve higher integration, the size of MOS transistorsused therein is reduced to a nanometer range. With smaller MOStransistors, it sometimes becomes difficult to suppress leak current andto decrease the area occupied by the circuit since a particular amountof current is required. Under these circumstances, a surrounding gatetransistor (hereinafter referred to as SGT), which includes a source, agate, and a drain arranged in perpendicular to a substrate, the gatesurrounding a pillar-shaped semiconductor layer, has been proposed (forexample, refer to Japanese Unexamined Patent Application PublicationNos. 2-71556, 2-188966, and 3-145761).

Using a metal in the gate electrode instead of polysilicon helpssuppress depletion and decrease the resistance of the gate electrode.However, this requires a production process that always takes intoaccount metal contamination caused by the metal gate in the stepssubsequent to formation of the metal gate.

To produce existing MOS transistors, a metal-gate-last process in whicha metal gate is formed after a high temperature process is put intopractice so as to avoid incompatibility between the metal gate processand the high temperature process (for example, refer to A 45 nm LogicTechnology with High-k+Metal Gate Transistors, Strained Silicon, 9 CuInterconnect Layers, 193 nm Dry Patterning, and 100% Pb-free Packaging,IEDM2007 K. Mistry et. al, pp 247-250).

That is, a MOS transistor has been made by forming a gate withpolysilicon, depositing an interlayer insulating film on thepolysilicon, exposing the polysilicon gate by chemical mechanicalpolishing (CMP), etching the polysilicon gate, and depositing a metal.In order to avoid incompatibility between the metal gate process and thehigh temperature process, it is also necessary for producing a SGT toemploy a metal-gate-last process with which a metal gate is formed aftera high temperature process. Since the upper part of a pillar-shapedsilicon layer of a SGT is located at a position higher than the gate,some adjustment must be made in employing the metal-gate-last process.

An existing MOS transistor uses a first insulating film in order todecrease the parasitic capacitance between the gate line and thesubstrate. For example, in making a FINFET (refer to High performance22/20 nm FinFET CMOS devices with advanced high-K/metal gate scheme,IEDM2010, C C. Wu, et. al, 27.1.1-27.1.4, for example), a firstinsulating film is formed around one fin-shaped semiconductor layer andthen etched back so as to expose the fin-shaped semiconductor layer andto decrease the parasitic capacitance between the gate line and thesubstrate. In making a SGT also, a first insulating film is needed toreduce the parasitic capacitance between the gate line and thesubstrate. Since a SGT includes not only a fin-shaped semiconductorlayer but also a pillar-shaped semiconductor layer, some adjustment mustbe made in order to form a pillar-shaped semiconductor layer.

According to a known SGT manufacturing process, a contact hole for apillar-shaped silicon layer is formed by etching through a mask and thencontact holes for a gate line and a planar silicon layer are formed byetching through a mask (for example, refer to Japanese Unexamined PatentApplication Publication No. 2011-258780). That is, conventionally, twomasks have been used for forming contacts.

SUMMARY

The present invention has been made under the above-describedcircumstances. An object of the present invention is to provide asemiconductor device and a method for producing a semiconductor device,the method being a gate-last process capable of reducing the parasiticcapacitance between a gate line and a substrate and uses only one maskfor forming contacts, and to provide a semiconductor device obtainedfrom the method.

An embodiment of a semiconductor device in accordance with thedisclosure includes a fin-shaped semiconductor layer on a semiconductorsubstrate and extending in a first direction. A first insulating film isaround the fin-shaped semiconductor layer and a pillar-shapedsemiconductor layer resides on the fin-shaped semiconductor layer. Awidth of the pillar-shaped semiconductor layer, perpendicular to thefirst direction, is equal to a width of the fin-shaped semiconductorlayer perpendicular to the first direction. A gate insulating film isaround the pillar-shaped semiconductor layer and a metal gate electrodeis around the gate insulating film. A metal gate line extends in asecond direction perpendicular to the first direction of the fin-shapedsemiconductor layer and is connected to the metal gate electrode.

A method for producing a semiconductor device according to a firstaspect of the present invention includes:

a first step of forming a fin-shaped silicon layer on a siliconsubstrate, forming a first insulating film around the fin-shaped siliconlayer, and forming a pillar-shaped silicon layer in an upper portion ofthe fin-shaped silicon layer so that a width of the pillar-shapedsilicon layer is equal to a width of the fin-shaped silicon layer;

the second step of implanting an impurity to an upper portion of thepillar-shaped silicon layer, an upper portion of the fin-shaped siliconlayer, and a lower portion of the pillar-shaped silicon layer to formdiffusion layers, the second step being performed after the first step;

the third step of forming a gate insulating film, a polysilicon gateelectrode, a polysilicon gate line, and a polysilicon gate pad so thatthe gate insulating film covers the periphery and an upper portion ofthe pillar-shaped silicon layer and the polysilicon gate electrodecovers the gate insulating film, that, after the formation of thepolysilicon gate electrode, the polysilicon gate line, and thepolysilicon gate pad, an upper surface of the polysilicon is located ata position higher than the gate insulating film located on the diffusionlayer in the upper portion of the pillar-shaped silicon layer, and thatthe width of the polysilicon gate electrode and the width of thepolysilicon gate pad are larger than the width of the polysilicon gateline, the third step being performed after the second step;

the fourth step of forming a silicide in an upper portion of thediffusion layer in the upper portion of the fin-shaped silicon layer,the fourth step being performed after the third step;

the fifth step of depositing an interlayer insulating film, exposing thepolysilicon gate electrode, polysilicon gate line, and the polysilicongate pad, and etching the polysilicon gate electrode, polysilicon gateline, and the polysilicon gate pad, and depositing a metal layer so asto form a metal gate electrode, a metal gate line, and a metal gate pad,the metal gate line extending in a direction perpendicular to thefin-shaped silicon layer and being connected to the metal gateelectrode, the fifth step being performed after the fourth step; and

the sixth step of forming a contact directly connected to the diffusionlayer in the upper portion of the pillar-shaped silicon layer, the sixthstep being performed after the fifth step.

Preferably, a first resist for forming the fin-shaped silicon layer onthe silicon substrate is formed, the silicon substrate is etched byusing the first resist so as to form the fin-shape silicon layer, andthen the first resist is removed.

Preferably, the first insulating film is deposited around the fin-shapedsilicon layer and the first insulating film is etched back to expose theupper portion of the fin-shaped silicon layer.

Preferably, a second resist is formed so as to perpendicularly intersectthe fin-shaped silicon layer, the fin-shaped silicon layer is etched byusing the second resist, and the second resist is removed so that thepart where the fin-shaped silicon layer and the second resist intersectforms the pillar-shaped silicon layer.

Preferably, a second oxide film is deposited from above a structure thatincludes the fin-shaped silicon layer formed on the silicon substrate,the first insulating film formed around the fin-shaped silicon layer,and the pillar-shaped silicon layer formed in the upper portion of thefin-shaped silicon layer, a first nitride film is formed on the secondoxide film, and the first nitride film is etched so as to be left as asidewall.

Preferably, an impurity is then implanted so as to form the diffusionlayers in the upper portion of the pillar-shaped silicon layer and theupper portion of the fin-shaped silicon layer, the first nitride filmand the second oxide film are removed, and then a heat-treatment isperformed.

In a structure that includes the fin-shaped silicon layer formed on thesilicon substrate, the first insulating film formed around thefin-shaped silicon layer, the pillar-shaped silicon layer formed in theupper portion of the fin-shaped silicon layer, the diffusion layerformed in the upper portion of the fin-shaped silicon layer and thelower portion of the pillar-shaped silicon layer, and the diffusionlayer formed in the upper portion of the pillar-shaped silicon layer,

preferably, a gate insulating film is formed, polysilicon is depositedand planarized, and an upper surface of the planarized polysilicon islocated at a position higher than the gate insulating film on thediffusion layer in the upper portion of the pillar-shaped silicon layer;and

preferably, a second nitride film is deposited, a third resist forforming the polysilicon gate electrode, the polysilicon gate line, andthe polysilicon gate pad is formed, the second nitride film and thepolysilicon are etched by using the third resist so as to form thepolysilicon gate electrode, the polysilicon gate line, and thepolysilicon gate pad, the gate insulating film is etched, and then thethird resist is removed.

Preferably, a third nitride film is deposited and etched so as to beleft as a sidewall, a metal layer is deposited, and a silicide is formedin an upper portion of the diffusion layer in the upper portion of thefin-shaped silicon layer.

Preferably, a fourth nitride film is deposited, an interlayer insulatingfilm is deposited and planarized, the polysilicon gate electrode, thepolysilicon gate line, and the polysilicon gate pad are exposed, thepolysilicon gate electrode, the polysilicon gate line, and thepolysilicon gate pad are removed, and spaces where the polysilicon gateelectrode, the polysilicon gate line, and the polysilicon gate pad hadexisted are filled with a metal, and the metal is etched to expose thegate insulating film on the diffusion layer in the upper portion of thepillar-shaped silicon layer and to form the metal gate electrode, themetal gate line, and the metal gate pad.

Preferably, a fifth nitride film thicker than a half of the width of thepolysilicon gate line and thinner than a half of the width of thepolysilicon gate electrode and a half of the width of the polysilicongate pad is deposited to form contact holes on the pillar-shaped siliconlayer and the metal gate pad.

A semiconductor device according to a second aspect of the presentinvention includes

a fin-shaped semiconductor layer formed on a semiconductor substrate;

a first insulating film formed around the fin-shaped semiconductorlayer;

a pillar-shaped semiconductor layer formed on the fin-shapedsemiconductor layer, the width of the pillar-shaped semiconductor layerbeing equal to the width of the fin-shaped semiconductor silicon layer;

a diffusion layer formed in an upper portion of the fin-shapedsemiconductor layer and in a lower portion of the pillar-shapedsemiconductor layer;

a diffusion layer formed in an upper portion of the pillar-shapedsemiconductor layer;

a silicide formed in an upper portion of the diffusion layer in theupper portion of the fin-shaped semiconductor layer;

a gate insulating film formed around the pillar-shaped semiconductorlayer;

a metal gate electrode formed around the gate insulating film;

a metal gate line extending in a direction perpendicular to thefin-shaped semiconductor layer and being connected to the metal gateelectrode;

a metal gate pad connected to the metal gate line, the width of themetal gate electrode and the width of the metal gate pad being largerthan the width of the metal gate line; and

a contact formed on the diffusion layer formed in the upper portion ofthe pillar-shaped semiconductor layer,

in which the diffusion layer formed in the upper portion of thepillar-shaped semiconductor layer is directly connected to the contact.

According to the present invention, a method for producing asemiconductor device, the method being a gate-last process capable ofreducing the parasitic capacitance between the gate line and thesubstrate and a semiconductor device produced through this method can beprovided.

BRIEF DESCRIPTION OF THE DRAWING

FIG. 1(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 1(B) is a cross-sectional view taken along lineX-X′ in FIG. 1(A), and FIG. 1(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 1(A);

FIG. 2(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 2(B) is a cross-sectional view taken along lineX-X′ in FIG. 2(A), and FIG. 2(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 2(A);

FIG. 3(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 3(B) is a cross-sectional view taken along lineX-X′ in FIG. 3(A), and FIG. 3(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 3(A);

FIG. 4(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 4(B) is a cross-sectional view taken along lineX-X′ in FIG. 4(A), and FIG. 4(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 4(A);

FIG. 5(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 5(B) is a cross-sectional view taken along lineX-X′ in FIG. 5(A), and FIG. 5(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 5(A);

FIG. 6(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 6(B) is a cross-sectional view taken along lineX-X′ in FIG. 6(A), and FIG. 6(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 6(A);

FIG. 7(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 7(B) is a cross-sectional view taken along lineX-X′ in FIG. 7(A), and FIG. 7(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 7(A);

FIG. 8(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 8(B) is a cross-sectional view taken along lineX-X′ in FIG. 8(A), and FIG. 8(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 8(A);

FIG. 9(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 9(B) is a cross-sectional view taken along lineX-X′ in FIG. 9(A), and FIG. 9(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 9(A);

FIG. 10(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 10(B) is a cross-sectional view taken along lineX-X′ in FIG. 10(A), and FIG. 10(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 10(A);

FIG. 11(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 11(B) is a cross-sectional view taken along lineX-X′ in FIG. 11(A), and FIG. 11(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 11(A);

FIG. 12(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 12(B) is a cross-sectional view taken along lineX-X′ in FIG. 12(A), and FIG. 12(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 12(A);

FIG. 13(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 13(B) is a cross-sectional view taken along lineX-X′ in FIG. 13(A), and FIG. 13(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 13(A);

FIG. 14(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 14(B) is a cross-sectional view taken along lineX-X′ in FIG. 14(A), and FIG. 14(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 14(A);

FIG. 15(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 15(B) is a cross-sectional view taken along lineX-X′ in FIG. 15(A), and FIG. 15(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 15(A);

FIG. 16(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 16(B) is a cross-sectional view taken along lineX-X′ in FIG. 16(A), and FIG. 16(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 16(A);

FIG. 17(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 17(B) is a cross-sectional view taken along lineX-X′ in FIG. 17(A), and FIG. 17(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 17(A);

FIG. 18(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 18(B) is a cross-sectional view taken along lineX-X′ in FIG. 18(A), and FIG. 18(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 18(A);

FIG. 19(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 19(B) is a cross-sectional view taken along lineX-X′ in FIG. 19(A), and FIG. 19(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 19(A);

FIG. 20(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 20(B) is a cross-sectional view taken along lineX-X′ in FIG. 20(A), and FIG. 20(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 20(A);

FIG. 21(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 21(B) is a cross-sectional view taken along lineX-X′ in FIG. 21(A), and FIG. 21(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 21(A);

FIG. 22(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 22(B) is a cross-sectional view taken along lineX-X′ in FIG. 22(A), and FIG. 22(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 22(A);

FIG. 23(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 23(B) is a cross-sectional view taken along lineX-X′ in FIG. 23(A), and FIG. 23(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 23(A);

FIG. 24(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 24(B) is a cross-sectional view taken along lineX-X′ in FIG. 24(A), and FIG. 24(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 24(A);

FIG. 25(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 25(B) is a cross-sectional view taken along lineX-X′ in FIG. 25(A), and FIG. 25(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 25(A);

FIG. 26(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 26(B) is a cross-sectional view taken along lineX-X′ in FIG. 26(A), and FIG. 26(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 26(A);

FIG. 27(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 27(B) is a cross-sectional view taken along lineX-X′ in FIG. 27(A), and FIG. 27(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 27(A);

FIG. 28(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 28(B) is a cross-sectional view taken along lineX-X′ in FIG. 28(A), and FIG. 28(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 28(A);

FIG. 29(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 29(B) is a cross-sectional view taken along lineX-X′ in FIG. 29(A), and FIG. 29(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 29(A);

FIG. 30(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 30(B) is a cross-sectional view taken along lineX-X′ in FIG. 30(A), and FIG. 30(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 30(A);

FIG. 31(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 31(B) is a cross-sectional view taken along lineX-X′ in FIG. 31(A), and FIG. 31(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 31(A);

FIG. 32(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 32(B) is a cross-sectional view taken along lineX-X′ in FIG. 32(A), and FIG. 32(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 32(A);

FIG. 33(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 33(B) is a cross-sectional view taken along lineX-X′ in FIG. 33(A), and FIG. 33(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 33(A);

FIG. 34(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 34(B) is a cross-sectional view taken along lineX-X′ in FIG. 34(A), and FIG. 34(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 34(A);

FIG. 35(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 35(B) is a cross-sectional view taken along lineX-X′ in FIG. 35(A), and FIG. 35(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 35(A);

FIG. 36(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 36(B) is a cross-sectional view taken along lineX-X′ in FIG. 36(A), and FIG. 36(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 36(A);

FIG. 37(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 37(B) is a cross-sectional view taken along lineX-X′ in FIG. 37(A), and FIG. 37(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 37(A);

FIG. 38(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 38(B) is a cross-sectional view taken along lineX-X′ in FIG. 38(A), and FIG. 38(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 38(A); and

FIG. 39(A) is a plan view of a semiconductor device according to thepresent invention, FIG. 39(B) is a cross-sectional view taken along lineX-X′ in FIG. 39(A), and FIG. 39(C) is a cross-sectional view taken alongline Y-Y′ in FIG. 39(A).

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

A method for producing a semiconductor device according to an embodimentof the present invention and a semiconductor device obtained by themethod will now be described with reference to drawings.

A production method that includes forming a fin-shaped silicon layer ona silicon substrate, forming a first insulating film around thefin-shaped silicon layer, and forming a pillar-shaped silicon layer inan upper portion of the fin-shaped silicon layer is described below.

First, as shown in FIGS. 2(A)-2(C), a first resist 102 for forming afin-shaped silicon layer is formed on a silicon substrate 101.

Next, as shown in FIGS. 3(A)-3(C), the silicon substrate 101 is etchedto form a fin-shaped silicon layer 103. Although a fin-shaped siliconlayer is formed by using a resist as a mask here, a hard mask such as anoxide film or a nitride film may be used instead of the resist.

Next, as shown in FIGS. 4(A)-4(C), the first resist 102 is removed.

Then, as shown in FIGS. 5(A)-5(C), a first insulating film 104 composedof an oxide is formed around the fin-shaped silicon layer 103 bydeposition. The first insulating film may be an oxide film formed by ahigh-density plasma process or an oxide film formed by a low-pressurechemical vapor deposition process instead of one made by such adeposition method.

As shown in FIGS. 6(A)-6(C), the first insulating film 104 is etchedback to expose an upper portion of the fin-shaped silicon layer 103. Theprocess up to here is the same as the process of making a fin-shapedsilicon layer in PTL 2.

As shown in FIGS. 7(A)-7(C), a second resist 105 is formed toperpendicularly intersect the fin-shaped silicon layer 103. The partwhere the fin-shaped silicon layer 103 and the second resist 105intersect forms a pillar-shaped silicon layer. Since a line-shapedresist can be used as such, the possibility of the break of the resistafter formation of a pattern is low and the process becomes stable.

Then, as shown in FIGS. 8(A)-8(C), the fin-shaped silicon layer 103 isshaped by etching. As a result, the part where the fin-shaped siliconlayer 103 and the second resist 105 intersect forms a pillar-shapedsilicon layer 106. Accordingly, the width of the pillar-shaped siliconlayer 106 is equal to the width of the fin-shaped silicon layer 103. Asa result, a structure in which the pillar-shaped silicon layer 106 isformed in the upper portion of the fin-shaped silicon layer 103 and thefirst insulating film 104 is formed around the fin-shaped silicon layer103 is formed.

As shown in FIGS. 8(A)-8(C), the second resist 105 is removed.

A method for forming diffusion layers by implanting an impurity into anupper portion of the pillar-shaped silicon layer, an upper portion ofthe fin-shaped silicon layer, and a lower portion of the pillar-shapedsilicon layer is described below.

That is, as shown in FIGS. 10(A)-10(C), a second oxide film 107 isformed by deposition and a first nitride film 108 is formed. In order toprevent the impurity from being implanted into the sidewall of thepillar-shaped silicon layer, the first nitride film 108 need be formedonly on the sidewall of the pillar-shaped silicon layer so as to have asidewall shape. Since the upper part of the pillar-shaped silicon layerwill be covered with a gate insulating film and a polysilicon gateelectrode in the subsequent steps, it is desirable to form a diffusionlayer in the upper portion of the pillar-shaped silicon layer before thepillar-shaped silicon layer is covered as such.

Then, as shown in FIGS. 11(A)-11(C), the first nitride film 108 isetched so as to be left as a sidewall.

Next, as shown in FIGS. 12(A)-12(C), an impurity such as arsenic,phosphorus, or boron is implanted to form a diffusion layer 110 in theupper portion of the pillar-shaped silicon layer and diffusion layers109 and 111 in the upper portion of the fin-shaped silicon layer 103.

Then, as shown in FIGS. 13(A)-13(C), the first nitride film 108 and thesecond oxide film 107 are removed.

Referring now to FIGS. 14(A)-14(C), a heat-treatment is performed. Thediffusion layers 109 and 111 in the upper portion of the fin-shapedsilicon layer 103 come into contact with each other so as to form adiffusion layer 112. As a result of the above-described steps, animpurity is implanted into the upper portion of the pillar-shapedsilicon layer 106, the upper portion of the fin-shaped silicon layer103, and the lower portion of the pillar-shaped silicon layer 106 so asto form the diffusion layers 110 and 112.

A method for preparing a polysilicon gate electrode, a polysilicon gateline, and a polysilicon gate pad by using polysilicon will now bedescribed. According to this method, an interlayer insulating film isfirst deposited and then a polysilicon gate electrode, a polysilicongate line, and a polysilicon gate pad are exposed by chemical mechanicalpolishing (CMP). Thus, it is essential that the upper portion of thepillar-shaped silicon layer remain unexposed despite CMP.

In other words, as shown in FIGS. 15(A)-15(C), a gate insulating film113 is formed, a polysilicon 114 is deposited, and the surface thereofis planarized. The upper surface of the polysilicon 114 afterplanarization is to come at a position higher than the gate insulatingfilm 113 on the diffusion layer 110 in the upper portion of thepillar-shaped silicon layer 106. In this manner, the upper portion ofthe pillar-shaped silicon layer can remain unexposed despite CMP, duringwhich a polysilicon gate electrode 114 a, a polysilicon gate line 114 b,and a polysilicon gate pad 114 c become exposed and which is performedafter deposition of the interlayer insulating film.

Next, a second nitride film 115 is deposited. The second nitride film115 prevents formation of a silicide in the upper portions of thepolysilicon gate electrode 114 a, polysilicon gate line 114 b, andpolysilicon gate pad 114 c during the process of forming a silicide inthe upper portion of the fin-shaped silicon layer 103.

Next, as shown in FIGS. 16(A)-16(C), a third resist 116 for forming thepolysilicon gate electrode 114 a, the polysilicon gate line 114 b, andthe polysilicon gate pad 114 c is formed. The polysilicon gate pad 114 cis preferably arranged so that the part that forms a gate lineperpendicularly intersects the fin-shaped silicon layer 103 in order todecrease the parasitic capacitance between the gate line and thesubstrate. The width of the polysilicon gate electrode 114 a and thewidth of the polysilicon gate pad 114 c are preferably larger than thewidth of the polysilicon gate line 114 b.

Then, as shown in FIGS. 17(A)-17(C), the second nitride film 115 isformed by etching.

Then, as shown in FIGS. 18(A)-18(C), the polysilicon 114 is etched toform the polysilicon gate electrode 114 a, the polysilicon gate line 114b, and the polysilicon gate pad 114 c.

Then, as shown in FIGS. 19(A)-19(C), the gate insulating film 113 isetched so as to remove the bottom portion of the gate insulating film113.

Then, as shown in FIGS. 20(A)-20(C), the third resist 116 is removed.

The polysilicon gate electrode 114 a, the polysilicon gate line 114 b,and the polysilicon gate pad 114 c are thus formed through the stepsdescribed above.

The upper surface of the polysilicon after forming the polysilicon gateelectrode 114 a, the polysilicon gate line 114 b, and the polysilicongate pad 114 c is located at a position higher than the gate insulatingfilm 113 on the diffusion layer 110 in the upper portion of thepillar-shaped silicon layer 106.

A method for forming a silicide in the upper portion of the fin-shapedsilicon layer will now be described. This method is characterized inthat no silicide is formed in the upper portions of the polysilicon gateelectrode 114 a, the polysilicon gate line 114 b, and the polysilicongate pad 114 c, and the diffusion layer 110 in the upper portion of thepillar-shaped silicon layer 106. It is not preferable to form a silicidein the diffusion layer 110 in the upper portion of the pillar-shapedsilicon layer 106 since the number of steps in the method will increase.

First, as shown in FIGS. 21(A)-21(C), a third nitride film 117 isdeposited.

Next, as shown in FIGS. 22(A)-22(C), the third nitride film 117 isetched to be left as a sidewall.

Then, as shown in FIGS. 23(A)-23(C), a metal such as nickel or cobalt isdeposited to form a silicide 118 in the upper portion of the diffusionlayer 112 in the upper portion of the fin-shaped silicon layer 103.Since the polysilicon gate electrode 114 a, the polysilicon gate line114 b, and the polysilicon gate pad 114 c are covered with the thirdnitride film 117 and the second nitride film 115 and the diffusion layer110 in the upper portion of the pillar-shaped silicon layer 106 iscovered with the gate insulating film 113, the polysilicon gateelectrode 114 a, and the polysilicon gate line 114 b, no silicide isformed in these parts.

Through the steps described above, a silicide is formed in the upperportion of the fin-shaped silicon layer 103.

Next, a gate-last production process in which, after an interlayerinsulating film is deposited on the structure obtained through the stepsdescribed above, the polysilicon gate electrode 114 a, the polysilicongate line 114 b, and the polysilicon gate pad 114 c are exposed by CMPand removed by etching and then a metal is deposited is described.

First, as shown in FIGS. 24(A)-24(C), a fourth nitride film 119 isdeposited to protect the silicide 118.

Next, as shown in FIGS. 25(A)-25(C), an interlayer insulating film 120is deposited and the surface thereof is planarized by CMP.

Then, as shown in FIGS. 26(A)-26(C), the polysilicon gate electrode 114a, the polysilicon gate line 114 b, and the polysilicon gate pad 114 care exposed by CMP.

Then, as shown in FIGS. 27(A)-27(C), the polysilicon gate electrode 114a, the polysilicon gate line 114 b, and the polysilicon gate pad 114 care etched. They are preferably wet-etched.

Then, as shown in FIGS. 28(A)-28(C), a metal 121 is deposited and thesurface thereof is planarized so as to fill the spaces where thepolysilicon gate electrode 114 a, the polysilicon gate line 114 b, andthe polysilicon gate pad 114 c had existed with the metal 121. Atomiclayer deposition is preferably employed to fill the spaces.

Then, as shown in FIGS. 29(A)-29(C), the metal 121 is etched to exposethe gate insulating film 113 on the diffusion layer 110 in the upperportion of the pillar-shaped silicon layer 106. As a result, a metalgate electrode 121 a, a metal gate line 121 b, and a metal gate pad 121c are formed.

The steps described above constitute the method for producing asemiconductor device by a gate-last technique of depositing metal layersafter etching the polysilicon gate exposed by CMP after deposition ofthe interlayer insulating film.

A method for forming contacts will now be described. Here, since nosilicide is formed in the diffusion layer 110 in the upper portion ofthe pillar-shaped silicon layer 106, the contact is directly connectedto the diffusion layer 110 in the upper portion of the pillar-shapedsilicon layer 106.

That is, first, as shown in FIGS. 30(A)-30(C), a fifth nitride film 122is deposited so that the fifth nitride film 122 is thicker than a halfof the width of the polysilicon gate line 114 b and thinner than a halfof the width of the polysilicon gate electrode 114 a and a half of thewidth of the polysilicon gate pad 114 c. As a result, contact holes 123and 124 are formed on the pillar-shaped silicon layer 106 and the metalgate pad 121 c. The fifth nitride film 122 and the gate insulating film113 at the bottom portions of the contact holes 123 and 124 will beremoved by a subsequent step of etching the nitride film. Accordingly, amask for forming the contact hole 123 on the pillar-shaped silicon layerand the contact hole 124 on the metal gate pad 121 c is not needed.

Next, as shown in FIGS. 31(A)-31(C), a fourth resist 125 for forming acontact hole 126 on the fin-shaped silicon layer 103 is formed.

Then, as shown in FIGS. 32(A)-32(C), the fifth nitride film 122 and theinterlayer insulating film 120 are etched to form the contact hole 126.

Then, as shown in FIGS. 33(A)-33(C), the fourth resist 125 is removed.

Then, as shown in FIGS. 34(A)-34(C), the fifth nitride film 122, thefourth nitride film 119, and the gate insulating film 113 are etched toexpose the silicide 118 and the diffusion layer 110.

Then, as shown in FIGS. 35(A)-35(C), a metal is deposited to formcontacts 127, 128, and 129.

Through the steps described above, the contacts 127, 128, and 129 can beformed in the semiconductor device. According to this production method,no silicide is formed in the diffusion layer 110 in the upper portion ofthe pillar-shaped silicon layer 106 and thus the contact 128 is directlyconnected to the diffusion layer 110 in the upper portion of thepillar-shaped silicon layer 106.

The method for forming metal wiring layers will now be described.

First, as shown in FIGS. 36(A)-36(C), a metal 130 is deposited.

Next, as shown in FIGS. 37(A)-37(C), fifth resists 131, 132, and 133 forforming metal wirings are formed.

Then, as shown in FIGS. 38(A)-38(C), the metal 130 is etched to formmetal wirings 134, 135, and 136.

Then, as shown in FIGS. 39(A)-39(C), the fifth resists 131, 132, and 133are removed.

Through the steps described above, the metal wirings 134, 135, and 136which constitute metal wiring layers are formed.

A semiconductor device produced by the production method described aboveis shown in FIGS. 1(A)-1(C).

The semiconductor device shown in FIGS. 1(A)-1(C) includes thefin-shaped silicon layer 103 formed on the silicon substrate 101, thefirst insulating film 104 formed around the fin-shaped silicon layer103, the pillar-shaped silicon layer 106 formed on the fin-shapedsilicon layer 103, the width of the pillar-shaped silicon layer 106being equal to the width of the fin-shaped silicon layer 103, and thediffusion layer 112 formed in the upper portion of the fin-shapedsilicon layer 103 and in the lower portion of the pillar-shaped siliconlayer 106.

The semiconductor device shown in FIGS. 1(A)-1(C) further includes thediffusion layer 110 formed in the upper portion of the pillar-shapedsilicon layer 106, the silicide 118 formed in the upper portion of thediffusion layer 112 in the upper portion of the fin-shaped silicon layer103, the gate insulating film 113 formed around the pillar-shapedsilicon layer 106, the metal gate electrode 121 a formed around the gateinsulating film, the metal gate line 121 b extending in a directionperpendicular to the fin-shaped silicon layer 103 and being connected tothe metal gate electrode 121 a, and the metal gate pad 121 c connectedto the metal gate line 121 b. The width of the metal gate electrode 121a and the width of the metal gate pad 121 c are larger than the width ofthe metal gate line 121 b.

The semiconductor device shown in FIGS. 1(A)-1(C) has a structure inwhich the contact 128 is formed on the diffusion layer 110 and thediffusion layer 110 is directly connected to the contact 128.

In sum, according to this embodiment of the present invention, a methodfor producing a SGT, which is a gate-last process capable of decreasingthe parasitic capacitance between the gate line and the substrate andwhich uses only one mask for forming contacts is provided. A SGTstructure obtained by this method is also provided.

Since the method for producing a semiconductor device of the embodimentis based on a known method for producing FINFET, the fin-shaped siliconlayer 103, the first insulating film 104, and the pillar-shaped siliconlayer 106 can be easily formed.

According to a known method, a silicide is formed in the upper portionof a pillar-shaped silicon layer. Since the polysilicon depositiontemperature is higher than the temperature for forming the silicide, thesilicide needs to be formed after forming the polysilicon gate. Thus, inthe case where a silicide is to be formed in the upper portion of asilicon pillar, the steps of forming a polysilicon gate, forming a holein the upper portion of the polysilicon gate electrode, forming asidewall with an insulating film on the sidewall of that hole, forming asilicide, and filling the hole with an insulating film are needed. Thus,there is a problem in that the number of steps in the method willincrease.

In contrast, according to the embodiment described above, diffusionlayers are formed before forming the polysilicon gate electrode 114 aand the polysilicon gate line 114 b and the pillar-shaped silicon layer106 is covered with the polysilicon gate electrode 114 a so that thesilicide is formed in the upper portion of the fin-shaped silicon layer103 only. Then a gate is formed with a polysilicon, the interlayerinsulating film 120 is deposited, the polysilicon gate is exposed bychemical mechanical polishing (CMP), and then the polysilicon gate isetched, followed by deposition of a metal. Such a metal-gate-lastproduction method can be used in this embodiment. Thus, according tothis method for producing a semiconductor device, a SGT having a metalgate can be easily produced.

The width of the polysilicon gate electrode 114 a and the width of thepolysilicon gate pad 114 c are larger than the width of the polysilicongate line 114 b. Furthermore, the fifth nitride film 122 thicker than ahalf of the width of the polysilicon gate line 114 b and thinner than ahalf of the width of the polysilicon gate electrode 114 a and a half ofthe width of the polysilicon gate pad 114 c are deposited in a holeformed by etching the polysilicon gate after forming the metal gate.Thus, the contact holes 123 and 124 can be formed on the pillar-shapedsilicon layer 106 and the metal gate pad 121 c, and thus aconventionally required etching step that forms a contact hole in thepillar-shaped silicon layer through a mask is no longer needed. In otherwords, only one mask is needed to form contacts.

It should be understood that various other embodiments and modificationsare possible without departing from the spirit and scope of the presentinvention in a broad sense. The embodiment described above is merelyillustrative and does not limit the scope of the present invention.

1. A semiconductor device comprising: a fin-shaped semiconductor layeron a semiconductor substrate and extending in a first direction; a firstinsulating film around the fin-shaped semiconductor layer; apillar-shaped semiconductor layer on the fin-shaped semiconductor layer,a width of the bottom of the pillar-shaped semiconductor layer,perpendicular to the first direction, being equal to a width of the topof the fin-shaped semiconductor layer perpendicular to the firstdirection; a gate insulating film around the pillar-shaped semiconductorlayer; a metal gate electrode around the gate insulating film; and ametal gate line extending in a second direction perpendicular to thefirst direction of the fin-shaped semiconductor layer and connected tothe metal gate electrode.